Meet us:

Santa Clara, CA, USA
Aug 2-3

Grenoble, France
Sept 20-22
Booth 12
The 61st Electronic Components and Technology Conference


Walt Disney World Swan and Dolphin Resort
Lake Buena Vista , Florida, USA
May 31- June 3, 2011
Further information can be found on the conference homepage


Low Temperature Glass-Thin-Films for Use in Power Applications

Abstract - A novel approach on wafer-level passivation of power devices using a thin, hermetic borosilicate glass layer as passivation or dielectric layer is presented here. The technology will be benchmarked to conventional technologies. The glass layer is deposited at low temperatures (T < 100°C) using a plasma-enhanced e-beam deposition and can be structured by a lift-off process using a standard photo resist process for masking. The process flow is fully compatible with standard CMOS post processing and is integrated in a state-of-the-art production environment.
The borosilicate thin-films yield breakdown voltages as high as 250 V/μm and a typical specific resistance of 1E17 Ohm/cm at room temperature, a value which is very close to the specific resistance of bulk borosilicate glass.
The coefficient of thermal expansion of the borosilicate thin-film (~3 ppm/K) is matched to silicon and enables systems to be reliable at high temperatures or in temperature cycling. Microstructured glass films were tested under extreme conditions e.g. up to temperatures as high as 650 °C as well as long-term temperature-humidity storage (85°C, 85% for 8000h).
We demonstrate the use of borosilicate thin-films as inter-dielectric layers in wafer-level redistribution, replacing standard polymers such as BCB or PI as a drop-in solution. Process parameters and reliability results are discussed.

Wafer-Level Glass-Caps for Advanced Optical Applications

Abstract - A novel process flow to manufacture miniaturized optical windows on wafer-level is presented. Those windows can be used for miniaturized optical products like high-brightness LEDs (HB-LED) and digital projection (DLP) as well as more complex optical data-communication, since integrated optical functions can be implemented with low tolerances.
We explain the fabrication of cap-wafers having a shallow cavity with a depth of typically 10 μm used in photo sensors and a unique manufacturing process for cap-wafers with a deep cavity of e.g. 300 μm used in LED packaging. Those cap-wafers are used in wafer-level integration of advanced, miniaturized optical products. We discuss two options for wafer bonding i.e. bonding using adhesive as well as anodic bonding.
As an example on product level a miniaturized photo sensor package, a pressure sensor package as well as a LED package is discussed.