Meet us:

Santa Clara, CA, USA
Aug 2-3

Grenoble, France
Sept 20-22
Booth 12
Mikrosystemtechnik-Kongress 2011


Wissenschafts- und Kongresszentrum
Schlossgraben 1
64283 Darmstadt

Further information can be found on the conference homepage


Hermetic Glass-Thin-Film for Wafer-Level-Packaging of Sensors and ICs

Abstract - Borosilcate glass thin-films with a thickness of a few micrometers are used as dielectric passivation and as bond interface for anodic bonding of substrates. The glass thin-film enables direct hermetic passivation of semiconductors on wafer- level. For MEMS packaging the Lithoglas layer is replacing conventional glass wafers acting as anodic bondable layer when performing wafer-level capping of MEMS devices thus enabling stress compensated designs as well as further miniaturization of the devices – in our example for wafer-level integration of two silicon wafers. The new process allows for very moderate bond parameters with bond voltages in the range of 30 – 60 V at standard bond temperatures of around 300 °C and below. This enables the use of anodic bonding also for sensitive devices.